isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4252 DESCRIPTION ·High Current-Gain Bandwidth Product fT = 2.1 GHz TYP. ·Low Output CapacitanceCOB = 1.1 pF TYP. APPLICATIONS ·Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 30 mA IB Base Current-Continuous 15 mA PC Collector Power Dissipation @TC=25℃ 0.1 W TJ Junction Temperature 125 ℃ -55~125 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4252 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 20V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 12 DC Current Gain IC= 5mA ; VCE= 10V 40 Current-Gain—Bandwidth Product IC= 5mA;VCE= 10V ; f= 500MHz 1.5 COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 1.1 1.4 pF rbb’ • CC Base Time Constant IC= 5mA ; VCB= 10V;f= 30MHz 4.3 10 ps V(BR)CEO hFE fT isc Website：www.iscsemi.cn 2 V 250 2.1 GHz INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC4252 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC4252 4