Inchange Semiconductor Product Specification 2SC3619 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High voltage ・Small collector output capacitance APPLICATIONS ・High voltage switching and amplifier ・Color TV horizontal driver applications ・Color TV chroma output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector- emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.1 A IB Base current 50 mA PC Collector power dissipation 1.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3619 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector cutoff current VCB=240V;IE=0 0.1 μA IEBO Emitter cutoff current VEB=7V;IC=0 0.1 μA VCEsat Collector-emitter saturation voltage IC=10mA ;IB=1mA 1 V VBEsat Base-emitter saturation voltage IC=10mA ;IB=1mA 1 V hFE-1 DC current gain IC=4mA ; VCE=10V 20 hFE-2 DC current gain IC=20mA ; VCE=10V 30 COb Output capacitance IE=0; VCB=20V;f=1MHz fT Transition frequency IC=20mA ; VCE=10V, 2 200 3 50 pF MHz Inchange Semiconductor Product Specification 2SC3619 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC3619 Silicon NPN Power Transistors 4