Inchange Semiconductor Product Specification 2SB1009 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1380 APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL VCBO VCEO VEBO IC PARAMETER M E S GE Collector-base voltage N A H INC Collector-emitter voltage Emitter-base voltage Open emitter Open base Open collector Collector current (DC) Ta=25℃ PD D N O IC CONDITIONS VALUE UNIT -40 V -32 V -5 V -2 A 0.1 Total power dissipation W TC=25℃ 10 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1009 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.8 V VBEsat Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -2.0 V ICBO Collector cut-off current VCB=-20V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 40 hFE-2 DC current gain IC=-500mA ; VCE=-5V 82 IC=-500mA ; VCE=-5V R O T UC fT COB CONDITIONS 导体 半 电 固 Transition frequency f=1MHz ; VCB=-10V N A H INC 2 TYP. MAX -32 D N O IC M E S GE Collector output capacitance MIN UNIT V 390 100 MHz 50 pF Inchange Semiconductor Product Specification 2SB1009 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3