Inchange Semiconductor Product Specification 2SB754 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SD844 ・High collector current :IC=-7A ・Low collector saturation voltage ・High power dissipation APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A IE Emitter current 7 A PC Collector power dissipation Ta=25℃ 2.5 TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB754 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -50 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA; IC=0 -5 V Collector-emitter saturation voltage IC=-4.0A; IB=-0.4A -0.2 -0.4 V VBE Base-emitter voltage IC=-4A ; VCE=-1V -0.9 -1.2 V ICBO Collector cut-off current VCB=-50V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-4A ; VCE=-1V 30 Transition frequency IC=-1A ; VCE=-5V 10 MHz Collector output capacitance IE=0;f=1MHz ; VCB=-10V 300 pF VCEsat fT COB CONDITIONS hFE-1 Classifications O Y 70-140 120-240 2 MIN TYP. MAX UNIT 240 Inchange Semiconductor Product Specification 2SB754 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm) 3 Inchange Semiconductor Product Specification 2SB754 Silicon Power Transistors 4