Inchange Semiconductor Product Specification 2SC3795B Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage ・Fast switching speed ・Low collector saturation voltage APPLICATIONS ・For high voltalge ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1300 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 6 A IB Base current 3 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3795B Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A , L=25mH VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 8 Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX 600 UNIT V 8 MHz Inchange Semiconductor Product Specification 2SC3795B Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3