ISC 2SC3795B

Inchange Semiconductor
Product Specification
2SC3795B
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・High breakdown voltage
・Fast switching speed
・Low collector saturation voltage
APPLICATIONS
・For high voltalge ,high-speed
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1300
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
8
V
IC
Collector current
6
A
IB
Base current
3
A
PC
Collector dissipation
Ta=25℃
2
TC=25℃
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3795B
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A , L=25mH
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.6A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=3A ; VCE=5V
8
Transition frequency
IC=0.5A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
600
UNIT
V
8
MHz
Inchange Semiconductor
Product Specification
2SC3795B
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3