Inchange Semiconductor Product Specification 2SC3868 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Wide area of safe operation APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 2 A ICM Collector current (pulse) 4 A IB Base current (DC) 0.5 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3868 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=1A ; VCE=5V 8 Transition frequency IC=0.2A ; VCE=10V fT CONDITIONS MIN TYP. MAX 400 UNIT V 30 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=1A ;IB=0.2A;IB2=-0.4A VCC=150V 2 0.7 μs 2.0 μs 0..3 μs Inchange Semiconductor Product Specification 2SC3868 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3