Inchange Semiconductor Product Specification 2SD1739 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PFa package ·Wide area of safe operation ·High voltage,high speed APPLICATIONS ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICM Collector current-peak 18 A IB Base current 2.5 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1739 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat V(BR)EBO ICBO CONDITIONS MAX UNIT IC=5A ;IB=1.2A 8.0 V Base-emitter saturation voltage IC=5A ;IB=1.2A 1.5 V Emitter-base breakdown voltage IE=1mA ;IC=0 TYP. 7 V VCB=750V; IE=0 10 μA VCB=1500V; IE=0 1 mA 10 μA Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=1A ; VCE=10V fT MIN 6 30 2 MHz 1.5 μs 0.2 μs Switching times tstg Storage time IC=5A; IB1=1A IB2=-2A; VCC=200V tf Fall time 2 Inchange Semiconductor Product Specification 2SD1739 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3