ISC 2SD1739

Inchange Semiconductor
Product Specification
2SD1739
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-3PFa package
·Wide area of safe operation
·High voltage,high speed
APPLICATIONS
·Horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
6
A
ICM
Collector current-peak
18
A
IB
Base current
2.5
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1739
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
V(BR)EBO
ICBO
CONDITIONS
MAX
UNIT
IC=5A ;IB=1.2A
8.0
V
Base-emitter saturation voltage
IC=5A ;IB=1.2A
1.5
V
Emitter-base breakdown voltage
IE=1mA ;IC=0
TYP.
7
V
VCB=750V; IE=0
10
μA
VCB=1500V; IE=0
1
mA
10
μA
Collector cut-off current
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
Transition frequency
IC=1A ; VCE=10V
fT
MIN
6
30
2
MHz
1.5
μs
0.2
μs
Switching times
tstg
Storage time
IC=5A; IB1=1A
IB2=-2A; VCC=200V
tf
Fall time
2
Inchange Semiconductor
Product Specification
2SD1739
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3