isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4330 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 8A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4330 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A ; IB= 0.3A, L= 1mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A 0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.4A 0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A; IB= 0.4A 1.5 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 10 μA ICEX Collector Cutoff Current VCE= 100V; VBE= -1.5V VCE= 100V; VBE= -1.5V;Ta=125℃ 10 1.0 μA mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 1A ; VCE= 2V 100 hFE-2 DC Current Gain IC= 2A ; VCE= 2V 100 hFE-3 DC Current Gain IC= 6A ; VCE= 2V 60 CONDITIONS L K 100-200 150-300 200-400 isc Website：www.iscsemi.cn TYP. UNIT V B B B 2 MAX 100 B hFE-2 classifications M MIN 200 400