ISC 2SC5280

Inchange Semiconductor
Product Specification
2SC5280
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3P(H)IS package
・High voltage
・Low saturation voltage
・High speed
・Bult-in damper diode
APPLICATIONS
・High speed switching applications
・Horizontal deflection output for medium
resolution display,color TV
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Maximum absolute ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
8
A
ICM
Collector current-peak
16
A
IB
Base current
4
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC5280
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
IC=6A;IB=1.5 A
VBEsat
Base-emitter saturation voltage
IC=6A;IB=1.5 A
V(BR)EBO
Emitter-base breakdown voltage
IE=400mA;IC=0
5
IEBO
Emitter cut-off current
VEB=5V; IC=0
72
ICBO
Collector cut-off current
VCB=1500V; IE=0
hFE-1
DC current gain
IC=1 A ; VCE=5V
10
35
hFE-2
DC current gain
IC=6A ; VCE=5V
4
8.5
Transition frequency
IE=0.1A ; VCE=10V
Collector output capacitance
Diode forward voltage
fT
COB
VF
CONDITIONS
MIN
TYP.
1.0
MAX
UNIT
5
V
1.5
V
V
250
mA
1
mA
2
MHz
IE=0 ; VCB=10V;f=1MHz
115
pF
IF=6A
1.4
1.8
V
4
6
μs
0.2
0.5
μs
Switching times
tstg
tf
Storage time
Fall time
ICP=6A;IB1(end)=1.2A
fH=31.5kHz
2
Inchange Semiconductor
Product Specification
2SC5280
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Inchange Semiconductor
Product Specification
2SC5280
Silicon NPN Power Transistors
4