Inchange Semiconductor Product Specification 2SC5280 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(H)IS package ・High voltage ・Low saturation voltage ・High speed ・Bult-in damper diode APPLICATIONS ・High speed switching applications ・Horizontal deflection output for medium resolution display,color TV PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Maximum absolute ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 4 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC5280 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage IC=6A;IB=1.5 A VBEsat Base-emitter saturation voltage IC=6A;IB=1.5 A V(BR)EBO Emitter-base breakdown voltage IE=400mA;IC=0 5 IEBO Emitter cut-off current VEB=5V; IC=0 72 ICBO Collector cut-off current VCB=1500V; IE=0 hFE-1 DC current gain IC=1 A ; VCE=5V 10 35 hFE-2 DC current gain IC=6A ; VCE=5V 4 8.5 Transition frequency IE=0.1A ; VCE=10V Collector output capacitance Diode forward voltage fT COB VF CONDITIONS MIN TYP. 1.0 MAX UNIT 5 V 1.5 V V 250 mA 1 mA 2 MHz IE=0 ; VCB=10V;f=1MHz 115 pF IF=6A 1.4 1.8 V 4 6 μs 0.2 0.5 μs Switching times tstg tf Storage time Fall time ICP=6A;IB1(end)=1.2A fH=31.5kHz 2 Inchange Semiconductor Product Specification 2SC5280 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification 2SC5280 Silicon NPN Power Transistors 4