Inchange Semiconductor Product Specification 2SD2539 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage ;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for color TV PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 3.5 A PC Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD2539 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS Emitter-base breakdown voltage IC=400mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=1.0A VBEsat Base-emitter saturation voltage IC=5A; IB=1.0A ICBO Collector cut-off current VCB=1500V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain hFE-2 MIN TYP. MAX 5 UNIT V 5 V 1.3 V 1 mA 66 200 mA IC=1A ; VCE=5V 8 28 DC current gain IC=5A ; VCE=5V 5 9 VF Diode forward voltage IF=5A 1.6 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 115 pF Transition frequency IC=0.1A ; VCE=10V 2 MHz fT 1.0 2.0 V Switching times : ts Storage time tf Fall time ICP=5A;IB1=1.0A fH =15.75kHz 2 6 9 μs 0.3 0.6 μs Inchange Semiconductor Product Specification 2SD2539 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification 2SD2539 Silicon NPN Power Transistors 4