isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2189 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2189 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V hFE DC Current Gain IC= 4A; VCE= 5V ICBO Collector Cutoff Current VCB= 150V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA isc Website：www.iscsemi.cn CONDITIONS MIN B B TYP. MAX UNIT 40