isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD334 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 75 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD334 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V 2.5 V VCB= 40V; IE= 0 50 μA VCB= 110V; IE= 0 1 mA ICBO hFE CONDITIONS MIN B TYP. MAX UNIT Collector Cutoff Current DC Current Gain IC= 1A ; VCE= 4V hFE Classifications R O Y 40-80 70-150 130-260 isc Website：www.iscsemi.cn 40 260