Inchange Semiconductor Product Specification 2SB1155 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1706 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -15 A ICM Collector current-peak -25 A PC TC=25℃ 80 Ta=25℃ 3 Collector power dissipation W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1155 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-7A ;IB=-0.35A -0.5 V VCEsat-2 Collector-emitter saturation voltage IC=-15A ;IB=-1.5A -1.5 V VBEsat-1 Base-emitter saturation voltage IC=-7A ;IB=-0.35A -1.5 V VBEsat-2 Base-emitter saturation voltage IC=-15A ;IB=-1.5A -2.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE -2 DC current gain IC=-3A ; VCE=-2V 90 hFE -3 DC current gain IC=-8A ; VCE=-2V 30 Transition frequency IC=-0.5A ; VCE=-10V;f=10MHz fT CONDITIONS MIN TYP. MAX -80 UNIT V 260 25 MHz 0.5 μs 1.3 μs 0.2 μs Switching times ton Turn-on time tstg Storage time tf IC=-7A ;IB1=-IB2=-0.7A VCC=-50V Fall time hFE-2 classifications Q P 90-180 130-260 2 Inchange Semiconductor Product Specification 2SB1155 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 Inchange Semiconductor Product Specification 2SB1155 Silicon PNP Power Transistors 4