ISC 2SB1606

Inchange Semiconductor
Product Specification
2SB1606
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Large collector current IC
・Low collector saturation voltage.
・Good linearity of hFE
APPLICATIONS
・For power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
导体
半
电
固
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
Collector-base voltage
Emitter-base voltage
CONDITIONS
VALUE
UNIT
-130
V
Open base
-80
V
Open collector
-7
V
M
E
S
GE
N
A
H
INC
Collector-emitter voltage
D
N
O
IC
R
O
T
UC
Open emitter
IC
Collector current
-5
A
ICM
Collector current-peak
-10
A
PC
Collector dissipation
TC=25℃
40
W
2
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1606
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-4A ; IB=-0.2A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-4A ; IB=-0.2A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V;IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V;IC=0
-50
μA
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
45
hFE-2
DC current gain
IC=-2A ; VCE=-2V
90
fT
CONDITIONS
导体
半
电
Transition frequency
固
tstg
tf
‹
Turn-on time
Fall time
IC=-2A; IB1=-IB2=-0.2A
hFE-2 classifications
Q
P
90-180
130-260
2
MAX
UNIT
V
260
30
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Storage time
TYP.
-80
IC=-0.5A ; VCE=-10V;f=10MHz
Switching times
ton
MIN
MHz
0.13
μs
0.5
μs
0.13
μs
Inchange Semiconductor
Product Specification
2SB1606
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SB1606
Silicon PNP Power Transistors
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
4