Inchange Semiconductor Product Specification 2SB1606 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Large collector current IC ・Low collector saturation voltage. ・Good linearity of hFE APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol 导体 半 电 固 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Emitter-base voltage CONDITIONS VALUE UNIT -130 V Open base -80 V Open collector -7 V M E S GE N A H INC Collector-emitter voltage D N O IC R O T UC Open emitter IC Collector current -5 A ICM Collector current-peak -10 A PC Collector dissipation TC=25℃ 40 W 2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1606 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=-4A ; IB=-0.2A -0.5 V VBEsat Base-emitter saturation voltage IC=-4A ; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-100V;IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V;IC=0 -50 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-2A ; VCE=-2V 90 fT CONDITIONS 导体 半 电 Transition frequency 固 tstg tf Turn-on time Fall time IC=-2A; IB1=-IB2=-0.2A hFE-2 classifications Q P 90-180 130-260 2 MAX UNIT V 260 30 R O T UC D N O IC M E S GE N A H INC Storage time TYP. -80 IC=-0.5A ; VCE=-10V;f=10MHz Switching times ton MIN MHz 0.13 μs 0.5 μs 0.13 μs Inchange Semiconductor Product Specification 2SB1606 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SB1606 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4