Inchange Semiconductor Product Specification 2SB868 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD960 ・Low collector saturation voltage ・High collector current capability APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current (DC) -4 A ICM Collector current-Peak -8 A PC Collector dissipation 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB868 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.15A -0.5 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.15A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-1A ; VCE=-2V 60 Transition frequency IC=-0.5A ; VCE=-10V fT CONDITIONS MIN TYP. MAX -80 UNIT V 260 30 MHz 0.15 μs 0.8 μs 0.15 μs Switching times ton Turn-on time tstg Storage time tf IC=-1A ; IB1=-IB2=-0.1A Fall time hFE-2 Classifications R Q P 60-120 90-180 130-260 2 Inchange Semiconductor Product Specification 2SB868 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3