ISC 2SD959

Inchange Semiconductor
Product Specification
2SD959
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Low collector saturation voltage
・Complement to type 2SB867
・Excellent linearity of hFE
APPLICATIONS
・For power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
130
V
Collector-emitter voltage
Open base
80
V
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
3
A
ICM
Collector current-peak
6
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD959
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IE=0
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.1A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.1A
1.5
V
ICBO
Collector cut-off current
VCB=100V;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
μA
hFE-1
DC current gain
IC=0.1A ; VCE=2V
45
hFE-2
DC current gain
IC=0.5A ; VCE=2V
60
Transition frequency
IC=0.5A ; VCE=10V
fT
CONDITIONS
MIN
TYP.
MAX
80
UNIT
V
260
30
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
MHz
Switching times
ton
ts
tf
‹
Turn-on time
IC=0.5A
IB1=-IB2=50mA
Storage time
Fall time
hFE-2 classifications
R
Q
P
60-120
90-180
130-260
2
0.5
μs
2.5
μs
0.15
μs
Inchange Semiconductor
Product Specification
2SD959
Silicon NPN Power Transistors
PACKAGE OUTLINE
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SD959
Silicon NPN Power Transistors
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
4
Inchange Semiconductor
Product Specification
2SD959
Silicon NPN Power Transistors
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
5