ISC 2SC3850

Inchange Semiconductor
Product Specification
2SC3850
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・Good linearity of hFE
・Low collector saturation voltage
APPLICATIONS
・For power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
20
A
ICM
Collector current-peak
30
A
IB
Base current
6
A
PC
Collector power dissipation
Ta=25℃
2.5
W
TC=25℃
125
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3850
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.5A ;L=25mH
VCEsat
Collector-emitter saturation voltage
IC=10A ;IB=2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=2A
1.5
V
ICBO
Collector cut-off current
VCB=500V ;IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE-1
DC current gain
IC=2A ; VCE=5V
15
hFE-2
DC current gain
IC=10A ; VCE=5V
10
Transition frequency
IC=1A ; VCE=10V
fT
400
UNIT
V
15
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A
IB1=-IB2=2A
VCC=125V
2
1.0
μs
2.5
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SC3850
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3