Inchange Semiconductor Product Specification 2SC3850 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Good linearity of hFE ・Low collector saturation voltage APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 20 A ICM Collector current-peak 30 A IB Base current 6 A PC Collector power dissipation Ta=25℃ 2.5 W TC=25℃ 125 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3850 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=25mH VCEsat Collector-emitter saturation voltage IC=10A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE-1 DC current gain IC=2A ; VCE=5V 15 hFE-2 DC current gain IC=10A ; VCE=5V 10 Transition frequency IC=1A ; VCE=10V fT 400 UNIT V 15 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=10A IB1=-IB2=2A VCC=125V 2 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3850 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3