Inchange Semiconductor Product Specification 2SD1411 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complementary to 2SB1018 APPLICATIONS ・Power amplifier applications ・High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IB Base current 1 A PC Collector power dissipation TC=25℃ 30 Ta=25℃ 2.0 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1411 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A 0.25 0.5 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.4A 0.9 1.4 V ICBO Collector cut-off current VCB=100V; IE=0 5 μA IEBO Emitter cut-off current VEB=5V; IC=0 5 μA hFE-1 DC current gain IC=1A ; VCE=1V 70 hFE-2 DC current gain IC=4A ; VCE=1V 30 Transition frequency VCE=4V;IC=1A 10 MHz Collector output capacitance f=1MHz ; VCB=10V;IE=0 250 pF 0.4 μs 2.5 μs 0.5 μs fT COB CONDITIONS MIN TYP. MAX 80 UNIT V 240 Switching times ton Turn-on time tstg Storage time tf IB1=-IB2=0.3A VCC=30V ,RL=10Ω Fall time hFE-1 Classifications O Y 70-140 120-240 2 Inchange Semiconductor Product Specification 2SD1411 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SD1411 Silicon NPN Power Transistors 4