Inchange Semiconductor Product Specification 2SB896 2SB896A Silicon PNP Power Transistors · DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SB896 VCBO Collector-base voltage -20 Open base 2SB896A VEBO Emitter-base voltage IC V -50 2SB896 Collector-emitter voltage UNIT -40 Open emitter 2SB896A VCEO VALUE V -40 Open collector -5 V Collector current (DC) -10 A ICM Collector current-Peak -15 A PC Collector power dissipation 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB896 2SB896A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SB896 MIN TYP. MAX UNIT -20 IC=-10mA; IB=0 2SB896A V -40 VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.23A -0.6 V VBEsat Base-emitter saturation voltage IC=-7A; IB=-0.23A -1.5 V -50 μA -50 μA ICBO 2SB896 Collector cut-off current 2SB896A VCB=-40V; IE=0 VCB=-50V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-2A ; VCE=-2V 60 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 200 pF fT Transition frequency IC=-0.5A ; VCE=-10V 150 MHz 0.1 μs 0.5 μs 0.1 μs 260 Switching times ton Turn-on time tstg Storage time tf IC=-2A ; IB1=-IB2=-66mA Fall time hFE-2 Classifications R Q P 60-120 90-180 130-260 2 Inchange Semiconductor Product Specification 2SB896 2SB896A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3