ISC 2SC3346

Inchange Semiconductor
Product Specification
2SC3346
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SA1329
・High speed switching time
: tstg=1.0μs(Typ.)
・Low collector saturation voltage
: VCE(sat)=0.4V(Max.)@IC=6A
APPLICATIONS
・For high current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
12
A
IB
Base current
2
A
PC
Collector dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3346
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=0.3A
0.2
0.4
V
VBEsat
Base-emitter saturation voltage
IC=6A; IB=0.3A
0.9
1.2
V
ICBO
Collector cut-off current
VCB=80V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
μA
hFE-1
DC current gain
IC=1A ; VCE=1V
70
hFE-2
DC current gain
IC=6A ; VCE=1V
40
fT
Transition frequency
IC=1A ; VCE=5V
80
MHz
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
220
pF
0.2
μs
1.0
μs
0.2
μs
80
UNIT
V
240
Switching times
Ton
Turn-on time
tstg
Storage time
tf
‹
IB1=-IB2=0.3A;
RL=5Ω,VCC=30V
Pw=20μs ;Duty≤1%
Fall time
hFE-1 classifications
O
Y
70-140
120-240
2
Inchange Semiconductor
Product Specification
2SC3346
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC3346
Silicon NPN Power Transistors
4