Inchange Semiconductor Product Specification 2SB753 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD843 ・Low collector saturation voltage ・High power dissipation APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V -7 A IC PC Collector current Ta=25℃ 1.5 TC=25℃ 40 Collector dissipation W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Inchange Semiconductor Product Specification 2SB753 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -0.3 -0.5 V VBEsat Base-emitter saturation voltage IC=-4A; IB=-0.4A -0.9 -1.4 V ICBO Collector cut-off current VCB=-100V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-4A ; VCE=-1V 30 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 250 pF fT Transition frequency IC=-1A ; VCE=-4V 10 MHz 0.4 μs 2.5 μs 0.5 μs -80 UNIT V 240 Switching times ton Turn-on time tstg Storage time tf IB1=- IB2=-0.3A ; VCC=-30V RL=10Ω Fall time hFE-1Classifications O Y 70-140 120-240 2 Inchange Semiconductor Product Specification 2SB753 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 Inchange Semiconductor Product Specification 2SB753 Silicon PNP Power Transistors 4