Inchange Semiconductor Product Specification 2SC3710 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1452 ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 80 V Collector-emitter voltage Open base 80 V Emitter-base voltage Open collector 6 V A H C IN IC Collector current 12 A IB Base current 2 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3710 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=6A;IB=0.3A 0.2 0.4 V VBEsat Base-emitter saturation voltage IC=6A;IB=0.3A 0.9 1.2 V ICBO Collector cut-off current VCB=80V; IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=1V 70 hFE-2 DC current gain IC=6A ; VCE=1V 40 COB Output capacitance IE=0 ; VCB=10V, f=1MHz fT Transition frequency 体 导 半 固电 Switching times ton ts tf Storage time IB1=-IB2=0.3A VCC≈30V ,RL=5Ω Fall time hFE-1 Classifications O Y 70-140 120-240 2 MIN TYP. MAX 80 UNIT V 240 220 R O T UC pF 80 MHz 0.2 μs 1.0 μs 0.2 μs D N O IC IC=1A ; VCE=5V EM S E NG A H C IN Turn-on time CONDITIONS Inchange Semiconductor Product Specification 2SC3710 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC Inchange Semiconductor Product Specification 2SC3710 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC