ISC 2SC3710

Inchange Semiconductor
Product Specification
2SC3710
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220Fa package
・Complement to type 2SA1452
・Low collector saturation voltage
・High speed switching time
APPLICATIONS
・High current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
体
导
半
Absolute maximum ratings (Ta=25℃)
固电
SYMBOL
VCBO
VCEO
VEBO
EM
S
E
NG
PARAMETER
D
N
O
IC
R
O
T
UC
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
80
V
Collector-emitter voltage
Open base
80
V
Emitter-base voltage
Open collector
6
V
A
H
C
IN
IC
Collector current
12
A
IB
Base current
2
A
PC
Collector dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3710
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=6A;IB=0.3A
0.2
0.4
V
VBEsat
Base-emitter saturation voltage
IC=6A;IB=0.3A
0.9
1.2
V
ICBO
Collector cut-off current
VCB=80V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
μA
hFE-1
DC current gain
IC=1A ; VCE=1V
70
hFE-2
DC current gain
IC=6A ; VCE=1V
40
COB
Output capacitance
IE=0 ; VCB=10V, f=1MHz
fT
Transition frequency
体
导
半
固电
Switching times
ton
ts
tf
‹
Storage time
IB1=-IB2=0.3A
VCC≈30V ,RL=5Ω
Fall time
hFE-1 Classifications
O
Y
70-140
120-240
2
MIN
TYP.
MAX
80
UNIT
V
240
220
R
O
T
UC
pF
80
MHz
0.2
μs
1.0
μs
0.2
μs
D
N
O
IC
IC=1A ; VCE=5V
EM
S
E
NG
A
H
C
IN
Turn-on time
CONDITIONS
Inchange Semiconductor
Product Specification
2SC3710
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
D
N
O
IC
Fig.2 Outline dimensions
3
R
O
T
UC
Inchange Semiconductor
Product Specification
2SC3710
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC