Inchange Semiconductor Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1412 APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector -emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A IB Base current -1 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1019 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -0.2 -0.4 V VBEsat Base-emitter saturation voltage IC=-4A ;IB=-0.4A -0.9 -1.2 V ICBO Collector cut-off current VCB=-70V; IE=0 -30 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-4A ; VCE=-1V 30 fT Transition frequency IC=-1A ; VCE=-4V 10 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF 0.2 μs 2.5 μs 0.5 μs -50 UNIT V 240 Switching times ton Turn-on time ts Storage time tf Fall time RL=10Ω IB1=-IB2=-0.3A VCC=-30V hFE-1 Classifications O Y 70-140 120-240 2 Inchange Semiconductor Product Specification 2SB1019 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3