Inchange Semiconductor Product Specification 2SD1594 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage APPLICATIONS ・Low frequency power amplifier ・High speed switching industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter 150 VCEO Collector-emitter voltage Open base 100 VEBO Emitter-base voltage Open collector IC V 7 V Collector current (DC) 7 A ICM Collector current-Peak 15 A IB Base current (DC) 3.5 A PC Collector power dissipation Ta=25℃ 1.5 TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1594 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=5A , IB1=0.5A,L=1mH VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.6 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=100V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.5A ; VCE=5V 40 hFE-2 DC current gain IC=3A ; VCE=5V 40 hFE-3 DC current gain IC=5A ; VCE=5V 20 60 UNIT V 240 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A ;IB1=0.5A IB2=-0.5A; VCC=50V RL=10Ω hFE-2 Classifications R O Y 40-80 70-140 120-240 2 0.5 μs 0.5 μs 1.5 μs Inchange Semiconductor Product Specification 2SD1594 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3