ISC 2SD1594

Inchange Semiconductor
Product Specification
2SD1594
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Low collector saturation voltage
APPLICATIONS
・Low frequency power amplifier
・High speed switching industrial use
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
V
VCBO
Collector-base voltage
Open emitter
150
VCEO
Collector-emitter voltage
Open base
100
VEBO
Emitter-base voltage
Open collector
IC
V
7
V
Collector current (DC)
7
A
ICM
Collector current-Peak
15
A
IB
Base current (DC)
3.5
A
PC
Collector power dissipation
Ta=25℃
1.5
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1594
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=5A , IB1=0.5A,L=1mH
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=0.5A
1.5
V
ICBO
Collector cut-off current
VCB=100V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
40
hFE-2
DC current gain
IC=3A ; VCE=5V
40
hFE-3
DC current gain
IC=5A ; VCE=5V
20
60
UNIT
V
240
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A ;IB1=0.5A
IB2=-0.5A; VCC=50V
RL=10Ω
hFE-2 Classifications
R
O
Y
40-80
70-140
120-240
2
0.5
μs
0.5
μs
1.5
μs
Inchange Semiconductor
Product Specification
2SD1594
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3