Inchange Semiconductor Product Specification 2SB1098 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1589 ・DARLINGTON ・High DC current gain APPLICATIONS ・Low speed switching industrial use ・Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -5 A ICM Collector current-peak -8 A IB Base current -0.5 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1098 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage VBEsat MIN TYP. MAX UNIT IC=-3A; IB=-3mA -1.5 V Base-emitter saturation voltage IC=-3A; IB=-3mA -2.0 V ICBO Collector cut-off current VCB=-100V ;IE=0 -1 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -3 mA hFE-1 DC current gain IC=-3A ; VCE=-2V 2000 hFE-2 DC current gain IC=-5A ; VCE=-2V 500 15000 Switching times ton Turn-on time ts Storage time tf Fall time IC=-3A ;IB1=-IB2=-3mA RL=17Ω;VCC=-50V; hFE-1 Classifications R O Y 2000-5000 3000-7000 5000-15000 2 0.5 μs 1 μs 1 μs Inchange Semiconductor Product Specification 2SB1098 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3