ISC 2SC2751

Inchange Semiconductor
Product Specification
2SC2751
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3N package
・High voltage ,high speed
APPLICATIONS
・For use in high voltage ,high speed
and power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
15
A
ICM
Collector current-peak
30
A
IB
Base current
7.5
A
PC
Collector power dissipation
120
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2751
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
TYP.
MAX
UNIT
Collector-emitter sustaining voltage
IC=10A ;IB=2A; L=50μH
400
VCEsat
Collector-emitter saturation voltage
IC=10A ;IB=2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=2A
1.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
100
μA
ICEX
Collector cut-off current
VCE=400V; VBE(off)=-1.5V
Ta=125℃
100
1.0
μA
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=2A ; VCE=5V
15
hFE-2
DC current gain
IC=5A ; VCE=5V
10
hFE-3
DC current gain
IC=10A ; VCE=5V
7
V
80
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A;IB1=-IB2=2A
RL=15Ω; VCC≈150V
hFE-1 Classifications
N
R
O
Y
15-30
20-40
30-60
40-80
2
1.0
μs
2.5
μs
0.7
μs
Inchange Semiconductor
Product Specification
2SC2751
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3