Inchange Semiconductor Product Specification 2SC2815 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolut maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC Ptot PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage CONDITIONS VALUE UNIT Open emitter 300 V Open base 250 V 6 V 5 A 40 W Open collector Collector current Total power dissipation TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification 2SC2815 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=50mA ; IB=0 250 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A 1.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.4A 1.2 V ICBO Collector cut-off current VCB=300V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6.0V; IC=0 0.1 mA hFE DC current gain IC=2.5A ; VCE=5V 2 MIN 40 TYP. MAX UNIT Inchange Semiconductor Product Specification 2SC2815 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3