Inchange Semiconductor Product Specification 2SD1881 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High speed ・High breakdown voltage ・High reliability ・Built in damper diode APPLICATIONS ・Color TV horizontal deflection output ・Color display horizontal deflection output. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A ICM Collector current-peak 30 A PC Collector power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1881 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6A 5 V VBEsat Base-emitter saturation voltage IC=8A ;IB=1.6A 1.5 V ICBO Collector cut-off current VCB=800V ;IE=0 10 μA IEBO Emitter cut-off current VEB=4V ;IC=0 130 mA ICES Collector cut-off current VCE=1500V 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=8A ; VCE=5V 5 Diode forward voltage IEC=10A Fall time IC=6A; VCC=200V; RL=33.3Ω;IB1=1.2A;IB2=-2.4A; VF tf CONDITIONS 2 MIN TYP. MAX 800 UNIT V 40 10 0.1 2 V 0.3 μs Inchange Semiconductor Product Specification 2SD1881 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SD1881 Silicon NPN Power Transistors 4