ISC 2SD476A

Inchange Semiconductor
Product Specification
2SD476 2SD476A
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SB566/566A
APPLICATIONS
・For low frequency power amplifier
power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
2SD476
Emitter-base voltage
UNIT
70
V
50
Open base
2SD476A
VEBO
VALUE
V
60
Open collector
5
V
IC
Collector current
4
A
ICM
Collector current-peak
8
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD476 2SD476A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
Collector-base breakdown voltage
V(BR)CEO
Collector-emitter
breakdown voltage
IC=10μA ; IE=0
2SD476
MIN
TYP.
MAX
70
UNIT
V
50
IC=50mA; RBE=∞
V
60
2SD476A
Emitter-base breakdown votage
IE=10μA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=2 A;IB=0.2 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2 A;IB=0.2 A
1.2
V
ICBO
Collector cut-off current
VCB=50V; IE=0
1
μA
hFE-1
DC current gain
IC=0.1A ; VCE=4V
35
hFE-2
DC current gain
IC=1A ; VCE=4V
60
Transition frequency
IC=0.5A ; VCE=4V
V(BR)EBO
fT
5
V
200
7
MHz
0.3
μs
3.0
μs
2.5
μs
Switching times
‹
ton
Turn-on time
toff
Turn-off time
tstg
Storage time
IC=0.5A ; VCC=10.5V
IB1=-IB2=0.05 A
hFE-2 classifications
B
C
60-120
100-200
2
Inchange Semiconductor
Product Specification
2SD476 2SD476A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SD476 2SD476A
Silicon NPN Power Transistors
4