Inchange Semiconductor Product Specification 2SB762 2SB762A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD857/857A ・Low collector saturation voltage APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 固 Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS IC M E ES 2SB762 VCBO G N A CH Collector-base voltage Open emitter 2SB762A VCEO VEBO IN 2SB762 Collector-emitter voltage Emitter-base voltage OND R O T UC VALUE UNIT -60 V -80 -60 Open base 2SB762A V -80 Open collector -5 V IC Collector current -4 A ICM Collector current-peak -8 A PC Collectorl power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB762 2SB762A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB762 Collector-emitter breakdown voltage VCEO CONDITIONS MAX UNIT IC=-30mA; IB=0 V -80 Collector-emitter saturation voltage IC=-4A;IB=-0.4 A -1.5 V VBE Base-emitter on voltage IC=-3A ; VCE=-4V -2.0 V ICES Collector cut-off current -400 μA -700 μA 2SB762 Collector cut-off current ICEO IEBO hFE-1 VCE=-80V; VBE=0 2SB762 VCE=-30V; IB=0 体 半导 VEB=-5V; IC=0 DC current gain IC=-1A ; VCE=-4V toff D N O IC IC=-3A ; VCE=-4V N A H INC Turn-on time hFE-1 classifications Q P 40-90 70-150 120-250 40 mA 250 15 0.3 μs 1.3 μs IC=-4A ; IB1=-IB2=-0.4 A Turn-off time R R O T UC -7 M E S GE DC current gain Switching times ton VCE=-60V; IB=0 Emitter cut-off current 固电 hFE-2 VCE=-60V; VBE=0 2SB762A 2SB762A TYP. -60 2SB762A VCEsat MIN 2 Inchange Semiconductor Product Specification 2SB762 2SB762A Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3