Inchange Semiconductor Product Specification 2SB870 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD866 ・Low collector saturation voltage ・High collector current capability APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER OND R O T UC VALUE UNIT -130 V Open base -80 V Open collector -7 V Collector current (DC) -7 A ICM Collector current-Peak -15 A PC Collector dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC IC M E ES ANG INCH Emitter-base voltage CONDITIONS Open emitter TC=25℃ Inchange Semiconductor Product Specification 2SB870 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.25A -0.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.25A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-3A ; VCE=-2V 60 fT 导体 半 电 CONDITIONS 固 Transition frequency Turn-on time tstg Storage time tf IN hFE-2 Classifications R Q P 60-120 90-180 130-260 2 UNIT V 260 TOR C U D ON MHz 0.1 μs 0.8 μs 0.1 μs IC=-3A ; IB1=-IB2=-0.3A Fall time MAX 30 IC M E ES G N A CH ton TYP. -80 IC=-0.5A ; VCE=-10V Switching times MIN Inchange Semiconductor Product Specification 2SB870 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3