Inchange Semiconductor Product Specification 2SD476 2SD476A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB566/566A APPLICATIONS ・For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Tc=25℃) SYMBOL VCBO PARAMETER CONDITIONS Collector-base voltage Open emitter 2SD476 VCEO Collector-emitter voltage Emitter-base voltage UNIT 70 V 50 Open base 2SD476A VEBO VALUE V 60 Open collector 5 V IC Collector current 4 A ICM Collector current-peak 8 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD476 2SD476A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-base breakdown voltage V(BR)CEO Collector-emitter breakdown voltage IC=10μA ; IE=0 2SD476 MIN TYP. MAX 70 UNIT V 50 IC=50mA; RBE=∞ V 60 2SD476A Emitter-base breakdown votage IE=10μA; IC=0 VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.2 A 1.0 V VBEsat Base-emitter saturation voltage IC=2 A;IB=0.2 A 1.2 V ICBO Collector cut-off current VCB=50V; IE=0 1 μA hFE-1 DC current gain IC=0.1A ; VCE=4V V(BR)EBO hFE-2 fT 5 V 35 TOR 体 U 导 D 半 N O C 固电 I EM S E G N A INCH DC current gain IC=1A ; VCE=4V Transition frequency IC=0.5A ; VCE=4V 60 200 7 MHz 0.3 μs 3.0 μs 2.5 μs Switching times ton toff tstg Turn-on time Turn-off time IC=0.5A ; VCC=10.5V IB1=-IB2=0.05 A Storage time hFE-2 classifications B C 60-120 100-200 2 Inchange Semiconductor Product Specification 2SD476 2SD476A Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SD476 2SD476A Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4