Inchange Semiconductor Product Specification 2SD826 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain ・Large current capacity APPLICATIONS ・For 3V, 6V strobe applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 20 V VEBO Emitter-base voltage Open collector 6 V 5 A 8 A IC Collector current ICM Collector current-peak PC Collector power dissipation t=100ms Ta=25℃ 1.0 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD826 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=3A; IB=60mA(pulse) 0.5 V Base-emitter saturation voltage IC=3A; IB=60mA(pulse) 1.5 V ICBO Collector cut-off current VCB=50V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE-1 DC current gain IC=0.5A ; VCE=2V 120 hFE-2 DC current gain IC=3A ; VCE=2V(pulse) 95 Transition frequency IC=50mA ; VCE=10V 120 MHz Collector output capacitance f=1MHz ; VCB=10V 45 pF 30 ns 300 ns 40 ns fT COB CONDITIONS MIN TYP. 560 Switching times ton Turn-on time tstg Storage time Fall time tf IC=2A ;IB1=-IB2=0.2A VCC=10V; RL=5Ω hFE-1 Classifications E F G 120-200 160-320 280-560 2 Inchange Semiconductor Product Specification 2SD826 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3