ISC 2SD826

Inchange Semiconductor
Product Specification
2SD826
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・Low collector saturation voltage
・High DC current gain
・Large current capacity
APPLICATIONS
・For 3V, 6V strobe applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
20
V
VEBO
Emitter-base voltage
Open collector
6
V
5
A
8
A
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
t=100ms
Ta=25℃
1.0
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD826
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
MAX
UNIT
IC=3A; IB=60mA(pulse)
0.5
V
Base-emitter saturation voltage
IC=3A; IB=60mA(pulse)
1.5
V
ICBO
Collector cut-off current
VCB=50V; IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
μA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
120
hFE-2
DC current gain
IC=3A ; VCE=2V(pulse)
95
Transition frequency
IC=50mA ; VCE=10V
120
MHz
Collector output capacitance
f=1MHz ; VCB=10V
45
pF
30
ns
300
ns
40
ns
fT
COB
CONDITIONS
MIN
TYP.
560
Switching times
ton
Turn-on time
tstg
Storage time
Fall time
tf
‹
IC=2A ;IB1=-IB2=0.2A
VCC=10V; RL=5Ω
hFE-1 Classifications
E
F
G
120-200
160-320
280-560
2
Inchange Semiconductor
Product Specification
2SD826
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3