Inchange Semiconductor Product Specification 2SD866 2SD866A Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Excellent linearity of hFE ·High collector current APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS 2SD866 VCBO Collector-base voltage 80 Open base 2SD866A VEBO Emitter-base voltage V 150 2SD866 Collector-emitter voltage UNIT 130 Open emitter 2SD866A VCEO VALUE V 100 Open collector 7 V IC Collector current 7 A ICM Collector current-peak 15 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD866 2SD866A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD866 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT 80 IC=0.2A; IB=0 2SD866A V 100 VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.25 A 0.5 V VBEsat Base-emitter saturation voltage IC=5 A;IB=0.25 A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 DC current gain IC=0.1A ; VCE=2V 45 hFE-2 DC current gain IC=3A ; VCE=2V 60 Transition frequency IC=0.5A ; VCE=10V fT B B 260 30 MHz 0.5 μs 1.5 μs 0.1 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=3A;IB1=-IB2=0.3 A hFE-2 classifications R Q P 60-120 90-180 130-260 2 Inchange Semiconductor Product Specification 2SD866 2SD866A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3