Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SB794/795 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SD985 Emitter -base voltage UNIT 150 V 60 Open base 2SD986 VEBO VALUE V 80 Open collector 8 V IC Collector current ±1.5 A ICM Collector current-Peak ±3.0 A IB Base current 0.15 A PT Total power dissipation Ta=25℃ 1.0 W TC=25℃ 10 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage VBEsat Base-emitter saturation voltage 2SD985 ICBO MIN TYP. MAX UNIT IC=1.0A; IB=1.0mA 1.5 V IC=1.0A; IB=1.0mA 2.0 V 10 μA 2.0 mA VCB=60V; IE=0 Collector cut-off current 2SD986 VCB=80V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.5A ; VCE=2V 1000 hFE-2 DC current gain IC=1.0A ; VCE=2V 2000 30000 Switching times ton Turn-on time ts Storage time tf Fall time IC=1.0A;IB1=-IB2=1.0mA VCC=50V; RL=50Ω hFE-2 Classifications M L K 2000-5000 4000-10000 8000-30000 2 0.5 μs 1.0 μs 1.0 μs Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 PACKAGE OUTLINE Fig.2 Outline dimensions 3