Inchange Semiconductor Product Specification 2SB601 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For low-frequency power amplifier and low-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 R O T UC Absolute maximum ratings(Tc=25℃) 固 SYMBOL PARAMETER VALUE UNIT -100 V -100 V -7 V Collector current-DC -5 A ICM Collector current-Pulse -8 A IB Base current-DC -0.5 A PT Total power dissipation VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC Open emitter D N O IC M E S GE N A H INC Emitter-base voltage CONDITIONS Open base Open collector TC=25℃ 30 W Ta=25℃ 1.5 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB601 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=-3A, IB1=-3mA,L=1mH VCEsat Collector-emitter saturation voltage IC=-3A ,IB=-3mA -1.5 V VBEsat Base-emitter saturation voltage IC=-3A ,IB=-3mA -2.0 V ICBO Collector cut-off current VCB=-100V, IE=0 -10 μA ICEX Collector cut-off current VCE=-100V, VBE=-1.5V Ta=25℃ -10 -1.0 μA mA IEBO Emitter cut-off current VEB=-5V; IC=0 -3.0 mA hFE-1 DC current gain IC=-3A ; VCE=-2V 2000 hFE-2 DC current gain IC=-5A ; VCE=-2V 500 Cob Output capacitance IE=0 ; VCB=-10V,f=0.1MHz 导体 半 电 固 Switching times ton Turn-on time tstg Storage time tf MIN IC=-3A; IB1=-IB2=-3mA VCC=-50V;RL=17Ω Fall time hFE-1Classifications M L K 2000-5000 3000-7000 5000-15000 MAX -100 2 UNIT V 15000 TOR C U D ON IC M E ES G N A INCH TYP. 300 pF 0.5 μs 1.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SB601 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3