ISC 2SB601

Inchange Semiconductor
Product Specification
2SB601
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220C package
・DARLINGTON
・High DC current gain
・Low collector saturation voltage
APPLICATIONS
・For low-frequency power amplifier and
low-speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
导体
半
电
R
O
T
UC
Absolute maximum ratings(Tc=25℃)
固
SYMBOL
PARAMETER
VALUE
UNIT
-100
V
-100
V
-7
V
Collector current-DC
-5
A
ICM
Collector current-Pulse
-8
A
IB
Base current-DC
-0.5
A
PT
Total power dissipation
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Open emitter
D
N
O
IC
M
E
S
GE
N
A
H
INC
Emitter-base voltage
CONDITIONS
Open base
Open collector
TC=25℃
30
W
Ta=25℃
1.5
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB601
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-3A, IB1=-3mA,L=1mH
VCEsat
Collector-emitter saturation voltage
IC=-3A ,IB=-3mA
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-3A ,IB=-3mA
-2.0
V
ICBO
Collector cut-off current
VCB=-100V, IE=0
-10
μA
ICEX
Collector cut-off current
VCE=-100V, VBE=-1.5V
Ta=25℃
-10
-1.0
μA
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-3.0
mA
hFE-1
DC current gain
IC=-3A ; VCE=-2V
2000
hFE-2
DC current gain
IC=-5A ; VCE=-2V
500
Cob
Output capacitance
IE=0 ; VCB=-10V,f=0.1MHz
导体
半
电
固
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
MIN
IC=-3A; IB1=-IB2=-3mA
VCC=-50V;RL=17Ω
Fall time
hFE-1Classifications
M
L
K
2000-5000
3000-7000
5000-15000
MAX
-100
2
UNIT
V
15000
TOR
C
U
D
ON
IC
M
E
ES
G
N
A
INCH
TYP.
300
pF
0.5
μs
1.0
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SB601
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3