isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2515DX DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of PC monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 9 A ICM Collector Current-Peak 20 A IB Base Current- Continuous 5 A IBM Base Current-Peak 7.5 A PC Collector Power Dissipation @ TC=25℃ 45 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2515DX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A 1.0 V ICES Collector Cutoff Current VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 6V ; IC= 0 130 hFE-1 DC Current Gain IC= 1A; VCE= 5V 13 hFE-2 DC Current Gain IC= 4.5A; VCE= 5V VECF C-E Diode Forward Voltage IF= 4.5A isc Website：www.iscsemi.cn 2 5 mA 10.2 2.2 V