ISC 2SD951

Inchange Semiconductor
Product Specification
2SD951
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Built-in damper diode
・High voltage capability
APPLICATIONS
・Line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VEBO
Emitter-base voltage
Open collector
VALUE
UNIT
1500
V
5
V
IC
Collector current
3
A
ICM
Collector current-peak
5
A
PT
Total power dissipation
65
W
Tj
Junction temperature
130
℃
Tstg
Storage temperature
-65~130
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD951
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IE=500m A;IC=0
VCEsat
Collector-emitter saturation voltage
IC=2 .5A;IB=0.8 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=2 .5A;IB=0.8 A
1.5
V
VCB=750V;IE=0
50
μA
VCB=1500V;IE=0
1.0
mA
ICBO
5
UNIT
Collector cut-off current
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=2.5A ; VCE=10V
3
Diode forward voltage
IF=4A
VF
tf
V
1.7
Fall time
V
0.9
μs
IC=2.5A;IBend=0.8A;LB=5μH
ts
Storage time
11
2
μs
Inchange Semiconductor
Product Specification
2SD951
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3