Inchange Semiconductor Product Specification 2SD1175 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Built-in damper diode ・High voltage ,high power dissipation ・Wide area of safe operation APPLICATIONS ・Line-operated horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 1500 V VEBO Emitter-base voltage Open collector 5 V 5 A 100 W IC Collector current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1175 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500mA; IC=0; VCEsat Collector-emitter saturation voltage IC=4.0 A;IB=0.8 A 5.0 V VBEsat Base-emitter saturation voltage IC=4.0 A;IB=0.8 A 1.5 V VCB=750V;IE=0 50 μA VCB=1500V;IE=0 1.0 mA ICBO 5 UNIT Collector cut-off current hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=4A ; VCE=10V 5 Diode forward voltage IF=4A VF V 30 2.5 2 V Inchange Semiconductor Product Specification 2SD1175 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3