Inchange Semiconductor Product Specification 3DD15D Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For B/W TV horizontal output and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolut maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 5 V 5 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature -55~175 ℃ Tstg Storage temperature -55~175 ℃ MAX UNIT 2.0 ℃/W TC=75℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 3DD15D Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 5 V Collector-emitter saturation voltage IC=2.5A ;IB=0.25A 1.5 V ICEO Collector cut-off current VCE=50V; IB=0 1.0 mA ICBO Collector cut-off current VCB=150V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.5 mA hFE DC current gain IC=2A ; VCE=10V VCEsat CONDITIONS 2 MIN 30 TYP. MAX 250 UNIT Inchange Semiconductor Product Specification 3DD15D Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3