Inchange Semiconductor Product Specification 3DD207 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・For audio amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol VALUE R O T UC UNIT 60 V 60 V 6 V 5 A 50 W Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC 体 导 半 固电 PARAMETER D N O IC CONDITIONS EM S E NG Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector A H C IN Collector current PC Collector power dissipation TC=75℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 3DD207 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=60V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain 体 导 半 固电 CONDITIONS IC=2A ; VCE=5V EM S E NG A H C IN 2 MIN TYP. MAX D N O IC R O T UC 40 250 UNIT Inchange Semiconductor Product Specification 3DD207 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3