Inchange Semiconductor Product Specification 3CD6D Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・For power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 体 导 半 Absolute maximum ratings(Ta=℃) 固电 SYMBOL VCBO VCEO VEBO PARAMETER INC CONDITIONS EM S E G N A H Collector-base voltage D N O IC Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector R O T UC VALUE UNIT -110 V -110 V -4 V -5 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=75℃ Inchange Semiconductor Product Specification 3CD6D Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -110 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IB=0 -4 V VCEsat Collector-emitter saturation voltage IC=-2.5A; IB=-0.5A VBEsat Base-emitter saturation voltage ICBO UNIT -1.5 V IC=-2.5A; IB=-0.5A -2.0 V Collector cut-off current VCB=-110V; IE=0 -0.1 mA ICEO Collector cut-off current VCE=-110V; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE DC current gain IC=-2.5A ; VCE=-10V 体 导 半 固电 EM S E NG A H C IN 2 -1.0 MAX D N O IC R O T UC 10 180 Inchange Semiconductor Product Specification 3CD6D Silicon PNP Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3