Inchange Semiconductor Product Specification 2N3446 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Excellent safe operating area APPLICATIONS ・Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V 7.5 A 115 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N3446 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.3A 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=7A;IB=1.5A 3.0 V VBE Base-emitter on voltage IC=3A ; VCE=5V 1.5 V ICEO Collector cut-off current VCE=100V; IB=0 0.7 mA ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=3A ; VCE=5V 20 hFE-2 DC current gain IC=7A ; VCE=5V 4 2 MIN TYP. MAX 100 UNIT V 60 Inchange Semiconductor Product Specification 2N3446 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3