Inchange Semiconductor Product Specification BU2520DW Silicon NPN Power Transistors DESCRIPTION ・With TO-247 package ・High voltage,high speed ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of large screen colour TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-247) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL OND VALUE UNIT 1500 V 800 V Collector current (DC) 10 A Collector current-peak 25 A IB Base Collector current (DC) 6 A IBM Base current-peak 9 A Ptot Total power dissipation 125 W VCBO VCEO IC ICM PARAMETER R O T UC Collector-base voltage IC M E ES ANG INCH Collector-emitter voltage CONDITIONS Open emitter Open base TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BU2520DW Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.1 V ICES Collector cut-off current VCE=BVCES; VBE=0 TC=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 300 mA hFE-1 DC current gain hFE-2 导体 半 电 CONDITIONS 固 Diode forward voltage CC Collector capacitance IN G N A CH M E S E IF=6A f=1MHz;VCB=10V 2 MAX UNIT V 13.5 V 13 R O T UC D N O IC IC=6A ; VCE=5V TYP. 100 IC=1.0A ; VCE=5V DC current gain VF MIN 5 7 9.5 2.2 115 V pF Inchange Semiconductor Product Specification BU2520DW Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3