ISC BU2722AF

Inchange Semiconductor
Product Specification
BU2722AF
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PFa package
・High voltage
・High speed switching
APPLICATIONS
・For use in horizontal deflection circuits
of high resolution monitors
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1700
V
VCEO
Collector-emitter voltage
Open base
825
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current (DC)
10
A
ICM
Collector current-peak
25
A
IB
Base current (DC)
10
A
IBM
Base current-peak
14
A
PT
Total power dissipation
45
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
BU2722AF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
825
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7.5
VCEsat
Collector-emitter saturation voltage
IC=4.5A ;IB=1.0A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5A ;IB=1.0A
1.0
V
ICES
Collector cut-off current
VCE=BVCES; VBE=0
Tj=125℃
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=1V
2
MIN
TYP.
MAX
V
13.5
V
22
4.5
UNIT
10
Inchange Semiconductor
Product Specification
BU2722AF
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3