ISC BU2520D

Inchange Semiconductor
Product Specification
BU2520D
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage,high speed
・Built-in damper diode
APPLICATIONS
・For use in horizontal deflection circuits of
large screen colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current (DC)
10
A
ICM
Collector current-peak
25
A
IB
Base current(DC)
6
A
IBM
Base current-peak
9
A
PC
Collector power dissipation
125
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
BU2520D
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
800
V(BR)EBO
Emitter-base breakdown voltage
IB=600mA; IC=0
7.5
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=1.2A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
1.3
V
ICES
Collector cut-off current
VCE=ratedVCE; VBE=0
Tj=125℃
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
300
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
VF
Diode forward voltage
IF=6A
CC
Collector capacitance
IE=0 ;VCB=10V;f=1MHz
V
13.5
100
V
23
5
7
10
2.2
2
UNIT
115
V
pF
Inchange Semiconductor
Product Specification
BU2520D
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3