FAIRCHILD FMS7G20US60

FMS7G20US60
Compact & Complex Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control and
general inverters where short-circuit ruggedness is
required.
Features
•
•
•
•
•
•
•
Short Circuit rated 10us @ TC = 100°C, VGE = 15V
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 20A
High Input Impedance
Built in Brake & 3 Phase Rectifier Circuit
Fast & Soft Anti-Parallel FWD
Built-in NTC Thermistor
Package Code : 25PM-AA
4
5
21
Application
22
•
•
•
•
24
25
23
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
20
17
19
16
18
14
13
8
1
15
10
9
7
3
2
6
11
NTC
12
Internal Circuit Diagram
Absolute Maximum Ratings
Inverter
&
Brake
Converter
Common
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TSC
VRRM
IO
IFSM
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
@ TC = 80°C
Pulsed Collector Current
Diode Continuous Forward Current
@ TC = 80°C
Diode Maximum Forward Current
Maximum Power Dissipation
@ TC = 25°C
Short Circuit Withstand Time
@ TC = 100°C
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
FMS7G20US60
600
± 20
20
40
20
40
89
10
1600
20
Units
V
V
A
A
A
A
W
us
V
A
200
A
164
A2s
I2t
TJ
Operating Junction Temperature
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
VISO
Isolation Voltage
Mounting part Screw
2500
2.0
V
N.m
Mounting Torque
Energy pulse @ 1Cycle at 60Hz
@ AC 1minute
@ M4
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2003 Fairchild Semiconductor Corporation
FMS7G20US60 Rev. A
FMS7G20US60
IGBT
C
Symbol
Parameter
Test Conditions
= 25°C unless otherwise noted
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
IC = 20mA, VCE = VGE
IC = 20A, VGE = 15V
5.0
--
6.5
2.1
8.5
2.7
V
V
----
1277
98
21
----
pF
pF
pF
-------------
65
100
80
100
0.45
0.42
70
100
110
210
0.5
0.72
130
200
160
200
--140
200
220
350
---
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
VCC = 300 V, VGE = 15V
100°C
10
--
--
us
VCE = 300 V, IC = 20A,
VGE = 15V
----
55
10
20
65
15
30
nC
nC
nC
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
Gate - Emitter Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
©2003 Fairchild Semiconductor Corporation
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
@ TC =
FMS7G20US60 Rev. A
FMS7G20US60
Electrical Characteristics of IGBT @ Inverter & Brake T
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
IF = 20A
di / dt = 40 A/us
VFM
Diode Forward Voltage
IRRM
Repetitive Reverse Current
Max.
2.8
--
2.0
--
--
75
150
--
110
--
TC = 25°C
--
1.3
2.6
TC = 100°C
--
1.8
--
TC = 25°C
--
50
195
TC = 100°C
--
100
--
Units
V
ns
A
nC
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 20A
TC = 100°C
VR = VRRM
Typ.
1.9
TC = 100°C
C
Parameter
Min.
--
TC = 25°C
Electrical Characteristics of DIODE @ Converter T
Symbol
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 20A
TC = 100°C
Min.
--
Typ.
1.1
Max.
1.5
--
1.0
--
TC = 25°C
--
--
8
TC = 100°C
--
5
--
Units
V
mA
Thermal Characteristics
Inverter
Brake
Converter
Weight
Symbol
RθJC
RθJC
RθJC
RθJC
RθJC
Junction-to-Case
Junction-to-Case
Junction-to-Case
Junction-to-Case
Junction-to-Case
Weight of Module
Parameter
(IGBT Part, per 1/6 Module)
(DIODE Part, per 1/6 Module)
(IGBT Part)
(DIODE Part)
(DIODE Part, per 1/6 Module)
Typ.
-----60
Max.
1.4
2.3
1.4
2.3
1.5
--
Units
°C/W
°C/W
°C/W
°C/W
°C/W
g
NTC Thermistor Characteristics
Thermistor
Symbol
R25
R100
B(25/100)
©2003 Fairchild Semiconductor Corporation
Parameter
Rated Resistance @ Tc = 25°C
Rated Resistance @ Tc = 100 °C
B - Value
Tol.
+/- 5 %
+/- 5 %
+/- 3 %
Typ.
4.7
0.39
3688
Units
KΩ
KΩ
FMS7G20US60 Rev. A
FMS7G20US60
Electrical Characteristics of DIODE @ Inverter & Brake T
V
5
1
V
0
2
V
2
1
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
0
4
0
4
Common Emitter
VGE = 15V
T C = 25℃ ━━
T C = 125℃ ------
0
5
0
5
FMS7G20US60
0
6
0
6
0
3
0
3
V
0
1
=
V
E
G
0
2
0
2
0
1
0
1
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
Common Emitter
T C = 25℃
0
0
]
0 V
1 [
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
1 o
t
c
e
l
l
o
C
8
]
V
[
6 V
,
e
g
a
t
l
o
V
r
4 e
t
t
i
m
E
r
o
2 t
c
e
l
l
o
C
0
E
C
E
C
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
A
0
4
T
B
G
I
2
A
0
2
1
A
0
1
=
IC
0.1
0
)
e
s
n
o
p
s
e
r
l
a
m
r
e
h
T
(
0
5
1
0
0
1
0
5
-5
10
]
C
o
[
C
T
,
e
r
u
t
a
r
e
p
m
e
T
e
s
C
0 a
0
5
-
0.01
-3
-2
10
10
-1
0
10
1
10
0
2
]
V
[
Common Emitter
TC = 25℃
Common Emitter
TC = 125℃
2
1
2
1
8
8
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
C
)
t
a
s
(
E
C
6
1
6
1
)
t
a
s
(
E
C
10
Fig 4. Transient Thermal Impedance
0
2
]
V
[
-4
10
Rectangular Pulse Duration [sec]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
4
4
A
0
4
A
0
2
0
2
]
6 V
1 [
V
,
e
2 g
1 a
t
l
o
V
r
e
t
t
8 i
m
E
e
G
t
4 a
0
2
]
6 V
1 [
V
,
e
2 g
1 a
t
l
o
V
r
e
t
t
8 i
m
E
e
G
t
4 a
0
E
G
E
G
©2003 Fairchild Semiconductor Corporation
A
0
1
=
IC
0
A
0
4
A
0
2
A
0
1
=
IC
0
Fig 5. Saturation Voltage vs. VGE
0
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
C
1
e
s
l
u
P
e
l
g
n
i
S
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
C
D
R
F
3
)
t
a
s
(
E
C
10
Common Emitter
VGE = 15V
Thermal Response, Zthjc [℃/W]
4
]
V
[
Fig 6. Saturation Voltage vs. VGE
FMS7G20US60 Rev. A
s
e
i
C
0
0
7
2
0
0
4
2
o
TC = 25 C
n
o
T
0
0
1
2
s
e
o
C
0
0
8
1
0
0
5
1
r
T
s
e
r
C
0
0
2
1
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
0
0
9
0
0
6
0
0
3
0
0
0
1
0
9
E
C
Fig 7. Capacitance Characteristics
0
0
0
1
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 20A
TC = 25℃ ━━
TC = 125℃ ------
f
f
o
E
f
f
o
T
f
n f
o o
E E
f
T
]
J
u
[
s
s
o
L
g
n
i
h
c
t
i
w
S
0
0
0
1
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 20A
TC = 25℃ ━━
TC = 125℃ ------
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
0
8
0
7
0
6
0
5
]
V
[
]
[
g
R
,
e
c
n
a
t
s
i
s
e
R
t
a
0
4 e
0 G
3
0
2
0
1
0
1 V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
1 E
r
o
t
c
e
l
l
o
C
1
.
0
Ω
0
0
1
0
0
1
0
9
0
8
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
1
0
9
0
8
0
7
0
6
0
5
]
[
g
R
,
e
c
n
a
t
s
i
s
e
R
e
t
a
G
]
[
g
R
,
e
c
n
a
t
s
i
s
e
t
a
0 R
4 e
0 G
3
0
2
0
1
Ω
Ω
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
0
0
0
1
0
0
0
1
0
0
1
f
T
r
T
0
1
0
4
5
3
0
3
5
2
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
o
C
c
0 e
2 l
l
5
1
0
1
0
4
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
©2003 Fairchild Semiconductor Corporation
5
3
0
3
5
2
0
2
5
1
0
1
Fig 11. Turn-On Characteristics vs.
Collector Current
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
Common Emitter
VGE = ± 15V, RG = 10Ω
TC = 25℃ ━━
TC = 125℃ ------
f
f
o
T
n
o
T
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
Common Emitter
VGE = ± 15V, RG = 10Ω
TC = 25℃ ━━
TC = 125℃ ------
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMS7G20US60 Rev. A
FMS7G20US60
0
0
0
1
0
0
0
3
]
F
p
[
e
c
n
a
t
i
c
a
p
a
C
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 20A
TC = 25℃ ━━
TC = 125℃ ------
Common Emitter
VGE = 0 V, f = 1 MHz
FMS7G20US60
5
1
0
0
0
0
1
C
C
V
0
0
3
V
0
0
1
=
o
TC = 25 C
V
0
0
2
E
G
Common Emitter
RL = 15 Ω
V
9
f
f
o
E
6
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
e
t
a
G
2
1
]
V
[
0
0
0
1
f
f
o
E
3
n
o
E
0
]
J
u
[
s
s
o
L
g
n
i
h
c
t
i
w
S
Common Emitter
VGE = ± 15V, RG = 10Ω
TC = 25℃ ━━
TC = 125℃ ------
0
0
1
0
6
0
5
]
C
0 n
4 [
g
Q
,
a
h
C
e
0 g
3 r
G
0 e
t
2 a
0
1
0
0
4
5
3
0
3
5
2
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
l
o
C
t
0 c
2 e
l
5
1
0
1
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
80
100
IC MAX. (Pulsed)
Collector Current, IC [A]
Collector Current, I C [A]
50us
IC MAX. (Continuous)
10
100us
1 ms
DC Operation
1
Single Nonrepetitive
Pulse T C = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.01
10
1
0.1
0.3
1
10
100
1000
Single Nonrepetitive
Pulse TJ ≤ 125℃
V GE = 15V
RG = 10 Ω
0
100
Fig 15. SOA Characteristics
500
600
700
Fig 16. RBSOA Characteristics
30
Peak Reverse Recovery Current, I rr [A]
Reverse Recovery Time, T rr [x10ns]
Common Cathode
V GE = 0V
T C = 25℃
T C = 125℃
35
[A]
400
20
40
F
300
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, V C E [V]
Forward Current, I
200
25
20
15
10
5
0
0
1
2
Forward Voltage, V F [V]
Fig 17. Forward Characteristics
©2003 Fairchild Semiconductor Corporation
3
4
10
Trr
Irr
1
Common Cathode
di/dt = 40A/us
T C = 25℃
T C = 100℃ -------0.1
3
6
9
12
15
18
21
Forward Current, IF [A]
Fig 18. Reverse Recovery Characteristics
FMS7G20US60 Rev. A
C
o
5
2
1
=
TC
0
0
1
C
o
5
2
0
1
C
o
5
2
1
=
TC
0
1
1
FMS7G20US60
0
0
1
0
0
0
1
1
C
o
5
2
.
0
1
]
A
u
[
IR
,
t
n
e
r
r
u
C
e
s
r
e
v
e
R
1
0
.
0
1
.
0
3
E
1
4
.
1
2
.
1
0
.
1
8
.
0
6
.
0
4
.
0
0
0
6
1
0
0
2
1
0
0
8
]
V
[
VF
,
e
g
a
t
l
o
V
s
u
o
e
n
a
t
n
a
t
s
n
I
]
V
[
R
V
,
e
g
a
t
l
o
V
e
s
r
e
v
0 e
0 R
4
0
]
A
[
IF
,
t
n
e
r
r
u
C
d
r
a
w
r
o
F
s
u
o
e
n
a
t
n
a
t
s
n
I
Fig 19. Rectifier( Converter ) Characteristics
Fig 20. Rectifier( Converter ) Characteristics
0
0
8
3
6
1
0
5
7
3
0
0
7
3
2
1
Ω
0
0
6
3
4
0
5
5
3
0
0
5
3
0
5
4
3
0
0
0
4
3
t
n
a
t
s
n
o
C
X
/
5
2
B
0
5
6
3
8
]
K
[
R
,
e
c
n
a
t
s
i
s
e
R
0
5
3
3
0
0
3
3
0
0
1
5
7
]
C
o
0 [
5 e
r
u
t
a
r
5 e
2 p
m
e
T
0
5
2
-
5
2
1
©2003 Fairchild Semiconductor Corporation
0
0
1
]
C
o
[
5
7 T
,
e
r
u
t
a
r
0 e
5 p
m
e
T
5
2
0
Fig 21. NTC Characteristics
Fig 22. NTC Characteristics
FMS7G20US60 Rev. A
FMS7G20US60
Package Dimension
25PM-AA
-. Pin Coordinate
Pin
#No
Name Plate
82.2 ±0.20
+0.20
71.0 -0.10
4- Ø6.0
4- Ø2.0
±0.10 Dp
57.0 ±0.20
6.0
Coordinate
x
y
1
0.0
0.0
2
-3.0
0.0
3
-6.0
0.0
4
-13.0
0.0
5
-18.0
0.0
6
-25.0
0.0
7
-29.0
0.0
+0.20
22
17.5 ±0.20
1
4.3±0.20
23.0±0.15
21.0 ±0.20
+0.20
+0.20
Ø1.0 ±0.05
11.2 -0.10
3.2 -0.10
+0.20
+0.20
5.1 -0.10
4.3±0.20
+0.20
16.7 -0.10
14.0±0.15
12
16.3 -0.10
+0.20
30.8 -0.10
37.9 ±0.20
15
2- Ø4.3 -0.00
Mounting-Hole
8
-32.0
0.0
9
-35.0
0.0
10
-38.0
0.0
11
-46.5
0.0
12
-49.5
0.0
13
-49.5
11.5
14
-49.5
20.0
15
-49.5
28.0
16
-32.0
28.0
17
-29.0
28.0
18
-23.0
28.0
19
-20.0
28.0
20
-14.0
28.0
21
-11.0
28.0
22
3.5
28.0
23
3.5
20.0
24
3.5
11.5
25
3.5
5.5
* datum pin : #1
* Pin Tilt : ±0.15
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
FMS7G20US60 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
FACT Quiet series™
Bottomless™
FAST®
FASTr™
CoolFET™
CROSSVOLT™ FRFET™
GlobalOptoisolator™
DOME™
EcoSPARK™
GTO™
E2CMOS™
HiSeC™
EnSigna™
I2C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I2