SGW6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. • • • • High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C G G E D2-PAK E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGW6N60UFD 600 ± 20 6 3 25 4 25 30 12 -55 to +150 -55 to +150 Units V V A A A A A W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. ---- Max. 4.0 7.0 40 Units °C/W °C/W °C/W Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material) ©2002 Fairchild Semiconductor Corporation SGW6N60UFD Rev. A1 SGW6N60UFD IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA IC = 3mA, VCE = VGE IC = 3A, VGE = 15V IC = 6A, VGE = 15V 3.5 --- 4.5 2.1 2.6 6.5 2.6 -- V V V ---- 220 22 7 ---- pF pF pF ------------------- 15 25 60 70 57 25 82 22 32 80 122 65 46 111 15 5 4 7.5 --130 150 --120 --200 300 --170 22 8 6 -- ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH Min. -- Typ. 1.4 Max. 1.7 Units TC = 100°C -- 1.3 -- TC = 25°C -- 35 52 TC = 100°C -- 53 -- TC = 25°C -- 3.5 5.0 TC = 100°C -- 4.5 -- TC = 25°C -- 60 135 TC = 100°C -- 120 -- Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 3A, RG = 80Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 3A, RG = 80Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 3A, VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge ©2002 Fairchild Semiconductor Corporation IF = 4A = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 4A, di/dt = 200A/us V ns A nC SGW6N60UFD Rev. A1 SGW6N60UFD Electrical Characteristics of the IGBT T Collector Current, IC [A] 25 Collector Current, I C [A] Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 20V Common Emitter T C = 25℃ 15V 20 15 12V 10 V GE = 10V 12 9 6 3 5 0 0 0 2 4 6 8 0.5 Collector - Emitter Voltage, V CE [V] 1 10 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4 8 V CC = 300V Load Current : peak of square wave Common Emitter V GE = 15V 3 6A 2 3A 6 Load Current [A] Collector - Emitter Voltage, VCE [V] SGW6N60UFD 15 30 IC = 1.5A 1 4 2 0 Duty cycle : 50% TC = 100℃ Power Dissipation = 9W 0 0 30 60 90 120 150 0.1 1 Case Temperature, TC [℃] 10 100 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter T C = 125℃ Collector - Emitter Voltage, VCE [V] Common Emitter T C = 25℃ Collector - Emitter Voltage, VCE [V] 1000 Frequency [KHz] 16 12 8 6A 4 3A IC = 1.5A 16 12 8 6A 4 3A IC = 1.5A 0 0 0 4 8 12 16 Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE SGW6N60UFD Rev. A1 100 Common Emitter V GE = 0V, f = 1MHz T C = 25℃ 350 Common Emitter V CC = 300V, VGE = ± 15V IC = 3A T C = 25℃ T C = 125℃ Switching Time [ns] Capacitance [pF] 300 Cies 250 200 150 100 Tr Cres 0 10 1 10 1 30 10 100 400 Gate Resistance, R G [Ω ] Collector - Emitter Voltage, V CE [V] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 300 Common Emitter VCC = 300V, VGE = ± 15V IC = 3A TC = 25℃ TC = 125℃ Common Emitter V CC = 300V, V GE = ± 15V IC = 3A T C = 25℃ T C = 125℃ 100 Eon Switching Loss [uJ] Switching Time [ns] Ton Coes 50 600 SGW6N60UFD 400 Toff Toff Tf 100 Eoff Eoff 10 Tf 50 5 1 10 100 400 1 10 Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance 500 Common Emitter VCC = 300V, VGE = ± 15V RG = 80Ω TC = 25℃ TC = 125℃ Common Emitter V CC = 300V, V GE = ± 15V RG = 80Ω TC = 25℃ TC = 125℃ Switching Time [ns] Switching Time [ns] 400 Fig 10. Switching Loss vs. Gate Resistance 200 100 100 Gate Resistance, R G [Ω ] Ton Toff 100 Tf Tr 10 50 1 2 3 4 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation 5 6 1 2 3 4 5 6 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGW6N60UFD Rev. A1 15 Common Emitter V CC = 300V, VGE = ± 15V RG = 80 Ω T C = 25℃ T C = 125℃ Common Emitter RL = 100 Ω Tc = 25℃ Gate - Emitter Voltage, VGE [ V ] Switching Loss [uJ] 100 SGW6N60UFD 200 Eon Eon Eoff 10 12 9 300 V 6 200 V VCC = 100 V 3 Eoff 0 5 1 2 3 4 5 6 0 3 6 9 12 15 Gate Charge, Qg [ nC ] Collector Current, IC [A] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 50 50 Ic MAX. (Pulsed) 50us Collector Current, IC [A] Collector Current, I C [A] 10 100us Ic MAX. (Continuous) 1㎳ 1 DC Operation 0.1 0.01 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.3 10 1 Safe Operating Area o VGE =20V, TC=100 C 1 10 100 0.1 1000 1 10 Collector-Emitter Voltage, V CE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response, Zthjc [℃/W] 10 0.5 1 0.2 0.1 0.05 0.02 0.1 Pdm 0.01 t1 t2 single pulse Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 0.01 10 -5 10 -4 10 -3 -2 10 -1 10 0 10 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGW6N60UFD Rev. A1 VR=200V IF=4A TC = 25℃ TC = 100℃ Reverse Recovery Current, I rr [A] Forward Current, IF [A] T C = 25℃ T C = 100℃ 10 1 10 1 100 0.1 0 1 2 3 4 Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 300 100 V R = 200V IF = 4A T C = 25℃ T C = 100℃ Reverce Recovery Time, trr [ns] 250 200 150 100 50 0 100 1000 di/dt [A/us] Fig 20. Stored Charge ©2002 Fairchild Semiconductor Corporation 1000 di/dt [A/us] Forward Voltage Drop, VFM [V] Stored Recovery Charge, Qrr [nC] SGW6N60UFD 100 100 80 V R=200V IF=4A T C = 25℃ T C = 100℃ 60 40 20 0 100 1000 di/dt [A/us] Fig 21. Reverse Recovery Time SGW6N60UFD Rev. A1 SGW6N60UFD Package Dimension 4.50 ±0.20 9.90 ±0.20 +0.10 2.00 ±0.10 2.54 TYP (0.75) ° ~3 0° 0.80 ±0.10 1.27 ±0.10 2.54 ±0.30 15.30 ±0.30 0.10 ±0.15 2.40 ±0.20 4.90 ±0.20 1.40 ±0.20 9.20 ±0.20 1.30 –0.05 1.20 ±0.20 (0.40) D2-PAK +0.10 0.50 –0.05 2.54 TYP 9.20 ±0.20 (2XR0.45) 4.90 ±0.20 15.30 ±0.30 10.00 ±0.20 (7.20) (1.75) 10.00 ±0.20 (8.00) (4.40) 0.80 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGW6N60UFD Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H5