FGA40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. • • • • High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3P E G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGA40N60UFD 600 ± 20 40 20 160 15 160 160 64 -55 to +150 -55 to +150 Units V V A A A A A W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2003 Fairchild Semiconductor Corporation Typ. ---- Max. 0.77 1.7 40 Units °C/W °C/W °C/W FGA40N60UFD Rev. A FGA40N60UFD IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA 3.5 --- 5.1 2.3 3.1 6.5 3.0 -- V V V ---- 1075 170 50 ---- pF pF pF ------------------- 15 30 65 35 470 130 600 30 37 110 80 500 310 810 77 20 25 14 --130 100 --1000 --200 250 --1200 150 30 40 -- ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH Min. -- Typ. 1.4 Max. 1.7 Units -- 1.3 -- Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V IC = 40A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 20A, VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge ©2003 Fairchild Semiconductor Corporation = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 15A TC = 100°C IF = 15A, di/dt = 200A/us TC = 25°C -- 50 95 TC = 100°C -- 74 -- TC = 25°C -- 4.5 6.0 TC = 100°C -- 6.5 -- TC = 25°C -- 80 180 TC = 100°C -- 220 -- V ns A nC FGA40N60UFD Rev. A FGA40N60UFD Electrical Characteristics of the IGBT T 80 Common Emitter Tc = 25℃ 20V Common Emitter V GE=15V Tc= 25℃ Tc= 125℃ 70 Collector Current , Ic (A) 15V 120 Collector Current, I c (A) FGA40N60UFD 160 12V 80 VGE = 10V 40 60 50 40 30 20 10 0 0 0 2 4 6 0.5 8 Collector-Emitter Voltage,VCE(V) Fig 1. Typical Output Characteristics 30 Common Emitter Vge=15V Vcc = 300V Load Current : peak of square wave 25 3 40A 20A 2 Ic=10A 1 20 15 10 5 Duty cycle : 50% Tc = 100℃ Powe Dissipation = 32W 0 0 30 60 90 120 0 150 0.1 Case Temperature, T C [℃] 10 100 1000 Fig 4. Load Current vs. Frequency 20 20 CE Collector - Emitter Voltage, V 16 12 8 20A 4 Common Emitter TC = 125℃ [V] Common Emitter TC = 25℃ [V] CE 1 Frequency [kHz] Fig. 1 Fig3.Saturation Voltage vs. Case Temperature at Variant Current Level Collector - Emitter Voltage, V 10 Fig 2. Typical Saturation Voltage Load Current [A] Collector - Emitter Voltage, VCE [V] 4 1 Collector-Emitter Voltage, V CE(V) 40A IC = 10A 0 16 12 8 40A 20A 4 Ic=10A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2003 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE FGA40N60UFD Rev. A Common Emitter VGE = 0V, f = 1MHz TC = 25℃ 2500 Common Emitter Vcc=300V,VGE= ± 15V Ic=20A Tc = 25℃ Tc = 125℃ Switching Time (ns) Cies Capacitance (pF) FGA40N60UFD 300 3000 2000 Coes 1500 1000 Cres 100 Ton Tr 500 10 0 1 1 30 10 10 Fig 7. Capacitance Characteristics 200 Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 2000 Common Emitter Vcc=300V,V GE= ± 15V Ic=20A Tc = 25℃ Tc = 125℃ Common Emitter Vcc=300V,VGE=± 15V Ic=20A Tc = 25℃ Tc = 125℃ 1000 Toff Switching Time (uJ) Switching Time (ns) 100 Gate Resistance, RG( Ω ) Collector-Emitter Voltage, VCE (V) 100 Tf Eon Eoff 100 Tf 50 20 1 10 100 1 200 10 Fig 9. Turn-Off Characteristics vs. Gate Resistance 1000 Ton Common Emitter VCC = 300V, V GE = ± 15V R G = 10 Ω T C = 25℃ T C = 125℃ Switching Time [nS] Switching Time (ns) 100 Tr 200 Fig 10. Switching Loss vs. Gate Resistance 200 10 100 Gate Resistance, RG( Ω ) Gate Resistance, RG( Ω ) Common Emitter VCC = 300V, VGE = ± 15V RG = 10Ω T C = 25℃ T C = 125℃ Toff 100 Toff Tf Tf 20 10 15 20 25 30 Collector Current, Ic (A) Fig 11. Turn-On Characteristics vs. Collector Current ©2003 Fairchild Semiconductor Corporation 35 40 10 15 20 25 30 35 40 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current FGA40N60UFD Rev. A Gate-Emitter Voltage, V GE (V) Switching Time (uJ) 1000 Eon 100 FGA40N60UFD 15 3000 Eoff Common Emitter VCC = 300V, VGE = ± 15V RG = 10Ω TC = 25℃ TC = 125℃ Eoff 10 10 15 20 25 30 35 Common Emitter RL=15 Ω (Tc=25 ℃) 12 300V 200V 9 Vcc=100V 6 3 0 40 0 30 Collector Current , Ic (A) 60 90 120 Gate Charge, Qg (nC) Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 500 500 IC MAX. (Pulsed) 100 50us Collector Current, IC [A] Collector Current, I C [A] 100 100us IC MAX. (Continuous) 1㎳ 10 DC Operation 1 0.1 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.3 10 1 Safe Operating Area o VGE =20V, T C=100 C 1 10 100 0.1 1000 1 10 Collector-Emitter Voltage, VCE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 1 Thermal Response, Zthjc [℃/W] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Pdm single pulse t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-3 10 -5 10 -4 -3 10 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2003 Fairchild Semiconductor Corporation FGA40N60UFD Rev. A Reverse Recovery Current, Irr [A] Forward Current, I F [A] 100 10 1 0 1 2 VR = 200V IF = 15A T C = 25℃ T C = 100℃ 10 1 100 3 Forward Voltage Drop, VF [V] 1000 di/dt [A/us] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 800 120 V R = 200V IF = 15A T C = 25℃ T C = 100℃ 600 Reverce Recovery Time, t rr [ns] Stored Recovery Charge, Qrr [nC] FGA40N60UFD 100 T C = 25℃ T C = 100℃ 400 200 0 VR = 200V IF = 15A TC = 25℃ TC = 100℃ 100 80 60 40 20 100 1000 di/dt [A/us] Fig 20. Stored Charge ©2003 Fairchild Semiconductor Corporation 100 1000 di/dt [A/us] Fig 21. Reverse Recovery Time FGA40N60UFD Rev. A FGA40N60UFD Package Dimensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] ©2003 Fairchild Semiconductor Corporation 5.45TYP [5.45 ±0.30] 0.60 –0.05 FGA40N60UFD Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I2