FMG2G75US120 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short-circuit ruggedness is required. Features • • • • • • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.6 V @ IC = 75A High Input Impedance Fast & Soft Anti-Parallel FWD UL Certified No.E209204 Package Code : 7PM-GA E1/C2 Application • • • • • AC & DC Motor Controls General Purpose Inverters Weldings Servo Controls UPS C1 E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES IC ICM (1) IF IFM PD TSC TJ Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Operating Junction Temperature TSTG Storage Temperature Range VISO Isolation Voltage Power Terminal Screw : M5 Mounting Screw : M5 Mounting Torque @ TC = 100°C @ AC 1minute FMG2G75US120 1200 ± 20 75 150 75 150 445 10 -40 to +150 Units V V A A A A W us °C -40 to +125 °C 2500 4.0 4.0 V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2004 Fairchild Semiconductor Corporation FMG2G75US120 Rev. A FMG2G75US120 IGBT Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 3mA 1200 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 3 ± 100 mA nA IC =75mA, VCE = VGE IC = 75A, VGE = 15V 5.0 -- 7.0 2.6 8.5 3.0 V V ------------- 75 80 295 50 6.9 4.3 80 80 310 70 8.4 5.6 ---150 --------- ns ns ns ns mJ mJ ns ns ns ns mJ mJ VCC = 600 V, VGE = 15V 100°C 10 -- -- us VCE = 300 V, IC =75A, VGE = 15V ---- 570 90 310 ---- nC nC nC Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current On Characteristics VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC =75A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 600 V, IC = 75A, RG =10Ω, VGE = 15V, Inductive Load, TC = 125°C @ TC = Electrical Characteristics of DIODE Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions IF = 75A IF = 75A di / dt = 1000 A/us Min. Typ. Max. TC = 25°C -- 2.3 3.0 TC = 125°C -- 2.2 -- TC = 25°C -- 150 -- TC = 125°C -- 225 -- TC = 25°C -- 47 -- TC = 125°C -- 61 -- TC = 25°C -- 3525 TC = 125°C -- 6863 -- Unit s V ns A nC Thermal Characteristics Symbol RθJC RθJC RθJC Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module ©2004 Fairchild Semiconductor Corporation Typ. --0.035 240 Max. 0.28 0.34 --- Units °C/W °C/W °C/W g FMG2G75US120 Rev. A FMG2G75US120 Electrical Characteristics of IGBT 0 4 1 0 4 1 Common Emitter TC = 25℃ 0 2 1 0 2 1 20V 0 0 1 0 0 1 15V 0 8 0 6 0 6 VGE = 10V 0 4 0 4 0 2 0 2 0 0 5 . 3 0] . V 3 [ 5V . , 2 e g a t l 0o . 2 V r e t t 5i . 1 m E 0r . 1 o t c e l l 5o . 0 C 0 . 0 0 . 4 E C E C 5 ] . V 3 [ 0 . 3 5 . 2 0 . 2 5 . 1 0 . 1 V , e g a t l o V r e t t i m E r o t c e l l o 5 C . 0 0 . 0 Fig 2. Typical Saturation Voltage Characteristics 0 . 5 0 6 1 5 . 4 0 4 1 Common Emitter TC = 125℃ 75A 5 . 2 0 6 VGE = 10V 100A 0 . 3 0 8 12V 150A 5 . 3 0 0 1 15V 0 . 2 0 4 IC = 40A 5 . 1 0 2 ] A [ IC , t n e r r u C r o t c e l l o C Common Emitter VGE = 15V 0 . 4 0 2 1 20V 0 . 1 5 2 1 0 0 1 5 7 0 5 5 . 3 E C ] C 0 [ C T , e r u t a r e p m e T e s a C ] 0 V . 3 [ 5 . 2 0 . 2 5 . 1 0 . 1 V , e g a t l o V r e t t i m E r o t c e l l 5 o . C 0 0 . 0 5 2 0 Fig 3. Typical Saturation Voltage Characteristics 0 0 0 1 Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter VGE = ± 15 V, RG = 10Ω TC = 25℃ ℃℃ TC = 125℃ ------ f f o T n o T 0 0 1 r T f T ] s n [ e m i T g n i h c t i w S 0 0 0 1 Common Emitter VGE = ± 15 V, RG = 10Ω TC = 25℃ ℃℃ TC = 125℃ ------ 0 0 1 ] s n [ e m i T g n i h c t i w S 12V 0 8 ] A [ IC , t n e r r u C r o t c e l l o C Fig 1. Typical Output Characteristics ] A [ IC , t n e r r u C r o t c e l l o C FMG2G75US120 0 6 1 0 6 1 ] A [ IC , t n e r r u C r o t c e l l o C Common Emitter VGE = 15V TC = 25℃ ℃℃ TC = 125℃ ------ 0 1 0 1 0 0 1 0 9 ] 0A 8[ IC , t n 0e 7r r u C t c e l 0r 6o l 0o 5C 0 4 0 3 0 0 1 ©2004 Fairchild Semiconductor Corporation 0 9 0 8 0 7 0 6 ] A [ IC , t n e r r u C r o t c e C l 0l 5o 0 4 0 3 Fig 5. Turn-On Characteristics vs. Collector Current Fig 6. Turn-Off Characteristics vs. Collector Current FMG2G75US120 Rev. A 4 1 0 0 0 1 n o E 2 1 0 1 Common Emitter VCC = 600 V, VGE = ± 15 V IC = 75 A TC = 25℃ ℃℃ TC = 125℃ ------ n o T 8 6 r T 0 0 1 f f o E 4 ] s n [ e m i T g n i h c t i w S 2 0 0 5 0 4 [ G 0 R 3 , e c n a t s i 0 s 2 e R e t a 0 G 1 0 0 0 1 0 9 0] 8A [ IC 0, t 7n e r r u 0 6C r o t c 0e l 5l o C 0 4 0 3 Ω] Fig 8. Turn-on Characteristics vs. Gate Resistance Fig 7. Switching Loss vs. Collector Current 0 2 n o E 8 f f o E 4 f T ] J m [ s s o l g n i h c t i w S Common Emitter VCC = 600 V, VGE = ± 15 V IC = 75 A TC = 25℃ ℃℃ TC = 125℃ ------ 2 1 f f o T 0 0 1 ] s n [ e m i T g n i h c t i w S 6 1 0 0 0 1 Common Emitter VCC = 600 V, VGE = ± 15 V IC = 75 A TC = 25℃ ℃℃ TC = 125℃ ------ 0 0 1 Fig 9. Turn-Off Characteristics vs. Gate Resistance 0 6 1 [A] Common Cathode VGE = 0V TC = 25℃ TC = 125℃ 0 0 1 F 0 2 1 9 0 8 0 6 6 0 4 Forward Current, I [V] Common Emitter RL = 7.5 Ω VCE = 600V TC = 25℃ 0 4 1 2 1 GE Ω Fig 10. Switching Loss vs. Gate Resistance 5 1 3 0 2 Gate - Emitter Voltage, V 0 5 0 4 0 3 0 2 ] [ G R , e c n a t s i s e R e t a 0 G 1 0 0 5 0 4 [ G R 0, 3e c n a t s i 0s 2e R e t a G 0 1 0 Ω] 0 0 0 . 4 5 . 3 0 . 3 5 . 2 0 . 2 5 . 1 0 . 1 5 . 0 ©2004 Fairchild Semiconductor Corporation 0 . 0 Fig 11. Gate Charge Characteristics 0 0 6 0 0 5 0 0 4 0 0 3 0 0 2 0 0 1 0 Gate Charge, Qg [ nC ] Forward Voltage, VF [V] Fig 12. Forward Characteristics(diode) FMG2G75US120 Rev. A FMG2G75US120 6 1 ] J m [ s s o L g n i h c t i w S Common Emitter VGE = ± 15 V, RG = 10Ω TC = 25℃ ℃℃ TC = 125℃ ------ Trr 0 0 1 Irr 0 1 Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [ns] FMG2G75US120 0 0 0 1 Common Cathode di/dt = 1000A/㎲ TC = 25℃ TC = 125℃ ------- 0 0 1 0 9 0 8 0 7 0 6 0 5 0 4 0 3 Forward Current, IF [A] Fig 13. Reverse Recovery Characteristics(diode) Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation FMG2G75US120 Rev. A FMG2G75US120 Package Dimension 7PM-GA Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation FMG2G75US120 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I11