FAIRCHILD FMG2G75US120

FMG2G75US120
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short-circuit ruggedness is required.
Features
•
•
•
•
•
•
Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.6 V @ IC = 75A
High Input Impedance
Fast & Soft Anti-Parallel FWD
UL Certified No.E209204
Package Code : 7PM-GA
E1/C2
Application
•
•
•
•
•
AC & DC Motor Controls
General Purpose Inverters
Weldings
Servo Controls
UPS
C1
E2
G1
E1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TSC
TJ
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Operating Junction Temperature
TSTG
Storage Temperature Range
VISO
Isolation Voltage
Power Terminal Screw : M5
Mounting Screw : M5
Mounting Torque
@ TC = 100°C
@ AC 1minute
FMG2G75US120
1200
± 20
75
150
75
150
445
10
-40 to +150
Units
V
V
A
A
A
A
W
us
°C
-40 to +125
°C
2500
4.0
4.0
V
N.m
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2004 Fairchild Semiconductor Corporation
FMG2G75US120 Rev. A
FMG2G75US120
IGBT
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 3mA
1200
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
3
± 100
mA
nA
IC =75mA, VCE = VGE
IC = 75A, VGE = 15V
5.0
--
7.0
2.6
8.5
3.0
V
V
-------------
75
80
295
50
6.9
4.3
80
80
310
70
8.4
5.6
---150
---------
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
VCC = 600 V, VGE = 15V
100°C
10
--
--
us
VCE = 300 V, IC =75A,
VGE = 15V
----
570
90
310
----
nC
nC
nC
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
Gate - Emitter Leakage Current
On Characteristics
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 600 V, IC =75A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 75A,
RG =10Ω, VGE = 15V,
Inductive Load, TC = 125°C
@ TC =
Electrical Characteristics of DIODE
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
TC = 25°C unless otherwise noted
Test Conditions
IF = 75A
IF = 75A
di / dt = 1000 A/us
Min.
Typ.
Max.
TC = 25°C
--
2.3
3.0
TC = 125°C
--
2.2
--
TC = 25°C
--
150
--
TC = 125°C
--
225
--
TC = 25°C
--
47
--
TC = 125°C
--
61
--
TC = 25°C
--
3525
TC = 125°C
--
6863
--
Unit
s
V
ns
A
nC
Thermal Characteristics
Symbol
RθJC
RθJC
RθJC
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
(Conductive grease applied)
Weight of Module
©2004 Fairchild Semiconductor Corporation
Typ.
--0.035
240
Max.
0.28
0.34
---
Units
°C/W
°C/W
°C/W
g
FMG2G75US120 Rev. A
FMG2G75US120
Electrical Characteristics of IGBT
0
4
1
0
4
1
Common Emitter
TC = 25℃
0
2
1
0
2
1
20V
0
0
1
0
0
1
15V
0
8
0
6
0
6
VGE = 10V
0
4
0
4
0
2
0
2
0
0
5
.
3
0]
.
V
3
[
5V
.
,
2
e
g
a
t
l
0o
.
2
V
r
e
t
t
5i
.
1
m
E
0r
.
1
o
t
c
e
l
l
5o
.
0
C
0
.
0
0
.
4
E
C
E
C
5 ]
.
V
3
[
0
.
3
5
.
2
0
.
2
5
.
1
0
.
1
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
5 C
.
0
0
.
0
Fig 2. Typical Saturation Voltage
Characteristics
0
.
5
0
6
1
5
.
4
0
4
1
Common Emitter
TC = 125℃
75A
5
.
2
0
6
VGE = 10V
100A
0
.
3
0
8
12V
150A
5
.
3
0
0
1
15V
0
.
2
0
4
IC = 40A
5
.
1
0
2
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
Common Emitter
VGE = 15V
0
.
4
0
2
1
20V
0
.
1
5
2
1
0
0
1
5
7
0
5
5
.
3
E
C
]
C
0
[
C
T
,
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
]
0 V
.
3
[
5
.
2
0
.
2
5
.
1
0
.
1
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
5 o
.
C
0
0
.
0
5
2
0
Fig 3. Typical Saturation Voltage
Characteristics
0
0
0
1
Fig 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Common Emitter
VGE = ± 15 V, RG = 10Ω
TC = 25℃ ℃℃
TC = 125℃ ------
f
f
o
T
n
o
T
0
0
1
r
T
f
T
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
0
0
0
1
Common Emitter
VGE = ± 15 V, RG = 10Ω
TC = 25℃ ℃℃
TC = 125℃ ------
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
12V
0
8
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
Fig 1. Typical Output Characteristics
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
FMG2G75US120
0
6
1
0
6
1
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
Common Emitter
VGE = 15V
TC = 25℃ ℃℃
TC = 125℃ ------
0
1
0
1
0
0
1
0
9
]
0A
8[
IC
,
t
n
0e
7r
r
u
C
t
c
e
l
0r
6o
l
0o
5C
0
4
0
3
0
0
1
©2004 Fairchild Semiconductor Corporation
0
9
0
8
0
7
0
6
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
C
l
0l
5o
0
4
0
3
Fig 5. Turn-On Characteristics vs.
Collector Current
Fig 6. Turn-Off Characteristics vs.
Collector Current
FMG2G75US120 Rev. A
4
1
0
0
0
1
n
o
E
2
1
0
1
Common Emitter
VCC = 600 V, VGE = ± 15 V
IC = 75 A
TC = 25℃ ℃℃
TC = 125℃ ------
n
o
T
8
6
r
T
0
0
1
f
f
o
E
4
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
2
0
0
5
0
4
[
G
0 R
3 ,
e
c
n
a
t
s
i
0 s
2 e
R
e
t
a
0 G
1
0
0
0
1
0
9
0]
8A
[
IC
0,
t
7n
e
r
r
u
0
6C
r
o
t
c
0e
l
5l
o
C
0
4
0
3
Ω]
Fig 8. Turn-on Characteristics vs.
Gate Resistance
Fig 7. Switching Loss vs. Collector Current
0
2
n
o
E
8
f
f
o
E
4
f
T
]
J
m
[
s
s
o
l
g
n
i
h
c
t
i
w
S
Common Emitter
VCC = 600 V, VGE = ± 15 V
IC = 75 A
TC = 25℃ ℃℃
TC = 125℃ ------
2
1
f
f
o
T
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
6
1
0
0
0
1
Common Emitter
VCC = 600 V, VGE = ± 15 V
IC = 75 A
TC = 25℃ ℃℃
TC = 125℃ ------
0
0
1
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
0
6
1
[A]
Common Cathode
VGE = 0V
TC = 25℃
TC = 125℃
0
0
1
F
0
2
1
9
0
8
0
6
6
0
4
Forward Current, I
[V]
Common Emitter
RL = 7.5 Ω
VCE = 600V
TC = 25℃
0
4
1
2
1
GE
Ω
Fig 10. Switching Loss vs. Gate Resistance
5
1
3
0
2
Gate - Emitter Voltage, V
0
5
0
4
0
3
0
2
]
[
G
R
,
e
c
n
a
t
s
i
s
e
R
e
t
a
0 G
1
0
0
5
0
4
[
G
R
0,
3e
c
n
a
t
s
i
0s
2e
R
e
t
a
G
0
1
0
Ω]
0
0
0
.
4
5
.
3
0
.
3
5
.
2
0
.
2
5
.
1
0
.
1
5
.
0
©2004 Fairchild Semiconductor Corporation
0
.
0
Fig 11. Gate Charge Characteristics
0
0
6
0
0
5
0
0
4
0
0
3
0
0
2
0
0
1
0
Gate Charge, Qg [ nC ]
Forward Voltage, VF [V]
Fig 12. Forward Characteristics(diode)
FMG2G75US120 Rev. A
FMG2G75US120
6
1
]
J
m
[
s
s
o
L
g
n
i
h
c
t
i
w
S
Common Emitter
VGE = ± 15 V, RG = 10Ω
TC = 25℃ ℃℃
TC = 125℃ ------
Trr
0
0
1
Irr
0
1
Peak Reverse Recovery Current, I rr [A]
Reverse Recovery Time, T rr [ns]
FMG2G75US120
0
0
0
1
Common Cathode
di/dt = 1000A/㎲
TC = 25℃
TC = 125℃ -------
0
0
1
0
9
0
8
0
7
0
6
0
5
0
4
0
3
Forward Current, IF [A]
Fig 13. Reverse Recovery Characteristics(diode)
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
FMG2G75US120 Rev. A
FMG2G75US120
Package Dimension
7PM-GA
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
FMG2G75US120 Rev. A
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Bottomless™
CoolFET™
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Across the board. Around the world.™
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I11